超薄溶液LPE技术生长GaInAsP／InP超晶格的理论与实验  

THEORY AND EXPERIMENTS OF GaInASP/InP SUPER LATTICE GROWTH BY VERY THIN SOLUTION LPE

作　　者：李洵[1] 陈根祥[1] 简水生[1] 

机构地区：[1]北方交通大学光波技术研究所

出　　处：《发光学报》1995年第1期70-77,共8页Chinese Journal of Luminescence

摘　　要：本文由有限厚度溶液及自由表面浓度和恒定表面浓度二种模型出发对ＬＰＥ生长动力学过程进行了理论分析，并导出了实现薄层生长的参数控制条件，根据这一条件用ＬＰＥ技术实际生长了ＧａＩｎＡｓＰ／ＩｎＰ超晶格，５７０℃下用突冷法及被压缩到２００μｍ～５００μｍ的薄层溶液在０．２ｓ的驻留时间内分别重复长出了５ｎｍ（Ｇａ０．４０Ｉｎ０．６０Ａｓ０．８９Ｐ０．１１）和１０ｎｍ（ＩｎＰ）的超晶格，证明了用重复推拉舟的ＬＰＥ系统在一定的参数条件下可以生长ＭＱＷ结构．sing the 'free surface concentration'and 'constant surface concentration'models,growing processes of the LPE technique are described under bounded solution conditions and the parameters for very thin film growing are obtained.GalnAsP/InP supper lattice structures have been developed using these parameters.sum(Ga0.40In0.60As0.89p0.11)/10nm (InP)3 wells structure is accomplished reproducibly under the condition of l(the solution depth)=200μm～500μm,tg=0.2s and Tg=570℃.It has been proved that accurate LPE system is capable of growing MQW structure under suitable conditions.

关 键 词：液相外延 量子阱 超晶格 GAINASP INP 

分 类 号：TN248.4[电子电信—物理电子学] TN365