Al_xGa_（1－x）As外延层中Si平面掺杂的SIMS研究  

SECONDARY-ION MASS SPECTROMETRY STUDY OF THE PLANAR Si-DOPED Al_xGa_(1-x)As

作　　者：钟战天[1] 吴冰清[1] 曹作萍 张广泽[1] 王佑祥[1] 陈新[1] 朱文珍[1] 张立宝 肖君 朱勤生[1] 邢益荣[1] 

机构地区：[1]中国科学院半导体研究所,中国科学院表面物理国家实验室

出　　处：《功能材料与器件学报》1995年第1X期2-8,共7页Journal of Functional Materials and Devices

基　　金：国家自然科学基金

摘　　要：利用二次离子质谱（ＳＩＭＳ）系统地研究了生长温度，Ａｌ组份ｘ值和Ａｓ＿４压强对Ｓｉδ掺杂Ａｌ＿ｘＧａ＿（１－ｘ）Ａｓ的ＳＩＭＳ深度剖面，Ｓｉ原子表面分凝和向衬底扩散的影响。实验发现，在外延生长Ｓｉδ掺杂Ａｌ＿ｘＧａ＿（１－ｘ）Ａｓ时，随着生长温度的提高或Ａｌ组份Ｘ值增加，Ｓｉ掺杂分布ＳＩＭＳ峰都非对称展宽，表面分凝作用加强，但不影响Ｓｉ原子的扩散，因此ＳＩＭＳ剖面的展宽与扩散无关。另外，我们还发现Ａｓ＿４压强高于１．５×１０￣（－５）ｍｂａｒ时，Ａｓ＿４压强对δ掺杂空间分布影响不大，而Ａｓ＿４压强低于此压强时，Ｓｉ掺杂分布峰宽度增加很快，这主要由杂质扩散作用引起。生长温度对掺杂分布峰影响最大，其次是Ａｌ组份影响，而较小Ａｓ＿４压强的影响不可忽视。这些研究结果对外延生长Ｓｉδ掺杂Ａｌ＿ｘＧａ＿（１－ｘ）Ａｓ材料是有价值的。The influence of growth temperature, Al composition x and As_4 pressure during molecular beamepitaxy on the shape of SIMS profiles, surface segregation and the diffusion of Si for the planar Si-dopedAl_xGa_(1-x)As have been investigated by using secondary-ion mass spectrometry(SIMS).The resultsindicate that all the Si peaks in the SIMS depth profile show asymmetric broadening,here surfajcesegregation increases markedly with growth temperature and Al composition x,while the change ofSi diffusion is very small and does not contribute to the shape of SIMS profile. It is shown that, theshape of the SIMS profile of δ-doped planes is almost not affected when the As_4 pressure is largerthan 1.5×10￣(-5)mbar, but a significant increase in FWHM of this profile occurs when As_4 pressureis lower than 1.5 ×10￣(-5)mbar, because of the increased Si diffusion in this case. Among the factors,which influence the shape of SIMS profile of Si, the growth temperature is most significant,the Alcomposition x is the next and the influence of As_4 pressure should be taken into account only at lowAs_4 pressure.

关 键 词：ALGAAS 硅 分子束外延 平面掺杂 二次离子质谱 

分 类 号：TN305.3[电子电信—物理电子学] TN304.054