SiGe HBT发射极延迟时间模型  

An Emitter Delay Time Model of an SiGe HBT

作　　者：胡辉勇[1] 张鹤鸣[1] 戴显英[1] 朱永刚[1] 王顺祥[1] 王伟[1] 崔晓英[1] 王青[1] 王喜媛[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2005年第7期1384-1389,共6页半导体学报（英文版）

基　　金：国家部委预研基金资助项目(批准号:41308060108;51408010301DZ0131)~~

摘　　要：在对SiGeHBT(异质结双极晶体管)载流子输运的研究基础上,建立了包括基区扩展效应SiGeHBT发射极延迟时间τe模型.发射极延迟时间与发射结势垒电容和集电结势垒电容密切相关.在正偏情况下,通常采用的势垒区耗尽层近似不再适用,此时需要考虑可动载流子的影响.本文重点分析了电流密度及发射结面积等参数对SiGeHBT发射极延迟时间的影响.Based on the analyzing and studying carrier transport of SiGe HBT （heterojunction bipolar transistor）, a model of the emitter delay time re,including base extending effect,is established, τe is influenced by the emitter junction capacitance CBE and the collector junction capacitance CBC. When SiGe HBT is in the normal forward bias,depleted approximation is not suited and the influence of movable charge should be taken into account. The emitter transit time ro of an SiGe HBT model is analyzed and simulated. The influences of the current density and the area of the emitter junction to τe of SiGe HBT are also analyzed.

关 键 词：SIGE HBT 势垒电容 发射极延迟时间 

分 类 号：TN322.8[电子电信—物理电子学]