阶梯埋氧型SOI结构的耐压分析  

Breakdown Voltage Analysis for a Step Buried Oxide SOI Structure

作　　者：段宝兴[1] 张波 李肇基[1] 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《Journal of Semiconductors》2005年第7期1396-1400,共5页半导体学报（英文版）

摘　　要：提出了一种阶梯埋氧型SOI(SBOSOI)RESURF器件结构,并解释了该结构的场调制耐压机理,通过2D MEDICI仿真验证了调制机理的正确性.优化了阶梯埋氧阶梯数与耐压的关系,得出阶梯数为3时耐压达到饱和.模拟仿真了比导通电阻和击穿电压,结果表明该结构在埋层厚度为0.2～0.8μm时可使比导通电阻降低40%～50%,耐压提高30%～50%;漂移区厚度小于1μm时比导通电阻降低10%～50%,耐压提高10%～50%.A novel RESURF structure of a step buried oxide SOI（SBOSOI） is developed and its electric field modulation model is explained and proved by 2D MEDICI software. The saturated breakdown voltage is obtained when the number of step buried oxide by optimizing is three. The simulation results show the breakdown voltage increases by 30%-50% and the on-resistance decreases by 40%-50% at the 0.2-0.8μm oxide thickness while the breakdown voltage increases by 10 %-50% and the onresistance decreases by 10%-50% at less than 1μm drift region thickness.

关 键 词：SOI RESURF结构 阶梯埋氧型SOI 电场调制 比导通电阻 

分 类 号：TN405[电子电信—微电子学与固体电子学]