MgO(111)上NbN和AlN薄膜的生长研究  

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

作　　者：陈亚军[1] 康琳[1] 蔡卫星[1] 施建荣[1] 赵少奇[1] 吉争鸣[1] 吴培亨[1] 

机构地区：[1]南京大学电子科学与工程系超导电子学研究所,南京210093

出　　处：《低温物理学报》2005年第3期207-210,共4页Low Temperature Physical Letters

摘　　要：在制备NbN/AlN/NbN隧道结的工艺过程中,为了获得具有优质单晶结构的NbN薄膜,我们在MgO(111)基片上探索了直流溅射法制备NbN薄膜的生长工艺条件,XRD研究分析表明,我们获得了单晶结构良好的NbN薄膜;为了支持作为上电极的NbN薄膜的生长,也需要良好的AlN薄膜用作势垒层,我们采用射频磁控溅射设备和纯净的Al靶对AlN薄膜进行了制备研究.实验结果表明,所获得的AlN薄膜具有六方c-轴取向,并讨论了衬底和薄膜界面处可能的结构情况.In the fabrication processing of a good NbN/AIN/NbN tunneling junction, the NbN film of high-quality single crystalline structure is necessary to be obtained. At ambient temperature, we deposit NbN thin film onto （111 ）MgO substrate by using direct-current magnetron sputtering, and the technological conditions of the growth of NbN is reported.X-my diffraction（XRD） pattrens show that the NbN film grown on （111）MgO substrate has an excellent single crystalline structure. To hold the growth of NbN thin film used as upper electrode, a good AIN thin film is needed for the barrier of SIS device. Using radio-frequency magnetron sputtering and pure A1 target, the AIN thin film is obtained.XRD patterns show that the A1N thin film grown on （ 111 ） MgO substrate has a c-axis orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

关 键 词：NbN AIN 磁控溅射 XRD C轴取向 NbN薄膜 AIN薄膜 生长研究 单晶结构 制备研究 直流溅射法 工艺过程 工艺条件 溅射设备 

分 类 号：O484.1[理学—固体物理] TN304.055[理学—物理]