Ge_2Sb_2Te_5材料与非挥发相转变存储器单元器件特性  

The performance of Ge_2Sb_2Te_5 material and nonvolatile phase-change-memory device

作　　者：凌云[1] 林殷茵[1] 赖连章[1] 乔保卫[2] 赖云锋[2] 冯洁[2] 汤庭鳌[1] 蔡炳初[2] Bomy.Chen 

机构地区：[1]复旦大学微电子学系ASIC与系统国家重点实验室 [2]上海交通大学微纳米研究院 [3]SST Inc.1171 Sonora Court Sunnyvale,CA,USA 94086

出　　处：《功能材料》2005年第8期1196-1199,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60376017);上海市纳米专项基金资助项目(0352nm011)

摘　　要：对Ge2Sb2Te5材料的结构、形貌和电学特性进行了表征,将材料应用于不挥发存储单元器件中并研究了器件性能。研究了退火温度对薄膜电阻率的影响,发现在从高阻向低阻状态转变的过程中,电阻率下降的趋势发生变化,形成拐点,分析表明这是由于在拐点处结构由面心立方向密排六方结构转变所致;对不同厚度Ge2Sb2Te5薄膜的电阻率进行了分析,结果表明当厚度薄于70nm时,电阻率随厚度显著上升而迁移率下降,材料晶态电学性能的测量显示,材料有正电阻温度系数并以空穴导电;测量了Ge2Sb2Te5非挥发相转变存储器单元的I-V曲线,发现有阈值特性,在晶态时电学特性呈欧姆特性,非晶态时I-V低场为线性关系,电场较高时呈指数关系。The performance of nonvolatile phase-change-memory material Ge2Sb2Te5 and its device cell was investigated. The effect of the annealing temperature on the resistivity and crystal structure of the Ge2Sb2Te5 film were studied. It was found that the film has two different decrease speed of the resistivity with the increasing temperature. The XRD spectra show the resistivity of the Ge2Sb2Te5 film depend on the crystal structural changes. The hall measurement shows the hole mobility decreased with the changing of film thickness from 100nm to 10nm and the film is positive temperature coefficient. The DC I-V curve of the electrically rewritable phase-change-memory cell was measured. The conductivity mechanism of cell in the crystalline and amorphous state was analyzed .

关 键 词：非晶半导体 阈值电压 相变存储器 

分 类 号：TN40[电子电信—微电子学与固体电子学]