SI^-、n-GaAs正电子湮没特性的研究  

Study of Positron Annihilation Characteristics in SI-n-GaAs

作　　者：吴凤美[1] 沈德勋 滕敏康[1] 陈岭[1] 唐杰[1] 张德宏[2] 

机构地区：[1]南京大学物理系 [2]南京电子器件研究所

出　　处：《Journal of Semiconductors》1989年第1期18-23,共6页半导体学报（英文版）

摘　　要：用正电子湮没技术,研究了半绝缘(SI)和掺Te的n型GaAs的退火行为及外延工艺的影响.结果表明,GaAs的平均寿命τ_M,长寿命τ_2,和基块寿命τ_b依赖于掺杂,同时τ_2的变化与镓空位和多镓空位均有关.外延后,由于退火的效果,I_2的降低和τ_2的增加是明显的.文中还讨论了电子和中子辐照的影响.Using the positron annihilation technique, the annealing behavior and the effects of epi-taxy process for SI-GaAs and n-GaAs:Te have been studied.The results show that themean lifetime τ_M,the long lifetime τ_2 and the bulk lifetime τ_b of GaAs depend upon doping,as well as the changes of τ_2 are related to both Ga-vacancy and multi-Ga-vacancy.Afterepitaxy process, the decrease in the values of I_2 and the increase in the values of τ_2 are ob-vious.The influence of electron and neutroa irradiation has also been discussed.

关 键 词：GAAS 正电子湮没 寿命 

分 类 号：TN301[电子电信—物理电子学]