Si_(1-x)Ce_x/Si量子阱发光材料制备及特性研究  

PREPARATION AND CHARACTERIZATION OF LUMINESCENT SiGe/Si QUANTUM WELL

作　　者：杨宇[1] 卢学坤[1] 黄大鸣[1] 蒋最敏[1] 杨敏[1] 章怡[1] 龚大卫[1] 陈祥君[1] 胡际璜[1] 张翔九[1] 赵国庆[2] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433 [2]复旦大学物理二系,上海200433

出　　处：《物理学报》1995年第6期995-1002,共8页Acta Physica Sinica

基　　金：国家自然科学基金部份资助的课题

摘　　要：在si(100)衬底上用分子束外延成功生长了Si_(1-x)Ge_x/si量子阱发光材料,发现在生长过程中背景杂质含量直接影响材料的发光特性,用光致发光(PL)和卢瑟福背散射(RBS)对样品质量进行标定。在PL测量中观察到合金量子阱带边激子分辨峰,并对发光峰能和峰宽作了讨论。Si1-xGex/Si quantum well structures for luminescence were successfully grown on Si*(l00)* substrates by molecular beam epitaxy. It was found that the impurities in the background was essential to PL spectra. The samples were characterized by photoluminescence and Rutherford back scattering. Well-resolved band-edge lumines-cence from SiGe quantum well was observed, and the energy and the width of lu-minescence peaks are disscussed.

关 键 词：硅锗合金 量子阱 发光材料 特性 分子束外延 

分 类 号：TN304.12[电子电信—物理电子学]