Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火  

Ion Implantation and Thermal Annealing of Ni/Si, Pt/Si and Ir/Si

作　　者：吴春武 殷士端[1] 张敬平[1] 范缇文[1] 刘家瑞[2] 朱沛然[2] 

机构地区：[1]中国科学院半导体研究所 [2]中国科学院物理研究所

出　　处：《Journal of Semiconductors》1989年第9期659-666,共8页半导体学报（英文版）

摘　　要：本文用RBS,AES,TEM和X射线衍射等实验方法,分析比较了Ni/Si,Pt/Si,Ir/Si系统在室温下As离子混合和热退火的行为.得出在Ni/Si系统中,硅混合量Q_(s1)与剂量Φ的平方根成正比,形成Ni_2Si相.在Pt/Si系中,硅混合量也与剂量的平方根成正比,先后形成Pt_3Si和Pt_2Si相.对Ir/Si系,Q_(s1)与Φ则是线性关系:Q_(s1)=aΦ+b,未测到化学相.实验表明:离子束混合能大大增强金属和硅化物的化学反应.在离子混合和退火形成硅化物的过程中,注入杂质As的分布有显著变化.RBS, AES, TEM and X-ray diffraction were used to analyze the As ion implantation andthermal annealing of Ni/Si, Pt/Si and Ir/Si systems.The experimental results show that: LoNi/Si system, the amount of mixed silicon Q_(si) is proportional to the square root of fluenceφ, and Ni_2Si silicide is formed; In Pt/Si, Q_(si) and φ have the same relationship Q_(si)～√φas Ni/Si system, and silicides Pt_3Si and Pt_2Si are formed; In Ir/Si system, Q_(si) and φ have alinear relation Q_(si) =aφ+b, and no silicide is detected.In summary,ion mixing can enhan-ce the chemical reaction between metal and silicon apparently.During the ion mixing andthermal annealing, implanted impurity As has redistributed.

关 键 词：离子注入 离子速混合 硅化物 

分 类 号：TN305.3[电子电信—物理电子学]