等离子体浸没注入超低能注入掺杂研究  

Plasma immersion ion implantation for ultra low energy doping

作　　者：汪明刚[1] 刘杰[1] 杨威风[1] 李超波[1] 夏洋[1] 

机构地区：[1]中国科学院微电子研究所中国科学院微电子器件与集成技术重点实验室,北京100029

出　　处：《核聚变与等离子体物理》2010年第4期370-373,共4页Nuclear Fusion and Plasma Physics

基　　金：国家科技重大专项(2009ZX02037);国家自然科学基金资助项目(60727003)

摘　　要：基于感应耦合等离子体(ICP)技术设计了一套用于在硅基片上制作形成超浅结的等离子体浸没注入(PIII)系统。该ICP PIII系统工作腔室为圆柱形,采用射频功率源,注入偏压源为一脉冲直流电压源,系统与Langmiur探针相连。探针诊断结果表明,该系统的等离子体离子密度达到1017m-3,离子密度径向均匀性达到3.53%。硼和磷的超低能注入试验的二次离子质谱测试结果表明:掺杂离子注入深度在10nm左右,最浅的注入深度为8.6nm(在注入离子密度为1018cm-3时);注入离子剂量达到了1015cm-2以上;掺杂离子浓度峰值在表面以下;注入陡峭度达到了2.5nm/decade。A plasma immersion ion implantation(PIII) system based on inductively coupled plasma(ICP) technology was designed.The PIII system had a cylindrical chamber,and a radio frequency(RF) power was used to sustain discharge and a pulsed voltage source was provided to bias the wafer.The RF power was coupled into chamber by a non-coplanar two-turn circular structure coil.A Langmuir probe was connected to the PIII system to diagnose the plasma parameters.The probe diagnosis indicated that plasma ion density of the system achieves 1017m-3,the uniformity of the ion density along radial direction achieves 3.53%.Boron(B) and phosphorus(P) doping experiments were performed on the system.Results from second ion mass spectrum(SIMS) tests showed that the measured injection depth is about 10nm and the shallowest is 8.6 nm(at 1018cm-3),the peak ion concentration is below the surface of the wafer,and the ion dose reaches above1015cm-2 and the abrupt 2.5 nm/decade.

关 键 词：感应耦合等离子体 浸没注入 低能注入 注入掺杂 ENERGY 离子密度 注入深度 系统工作 掺杂离子浓度 二次离子质谱 直流电压源 射频功率源 径向均匀性 诊断结果 探针 离子剂量 技术设计 硅基片上 测试结果 圆柱形 

分 类 号：O4[理学—物理]