直接键合InP-GaAs结构界面的特性研究  

Study on infrared absorption of interfaces in direct wafer bonded InP-GaAs structures

作　　者：劳燕锋[1] 吴惠桢[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《物理学报》2005年第9期4334-4339,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2003CB314903)资助的课题.~~

摘　　要：通过对直接键合InPGaAs结构的红外吸收光谱分析以及断面扫描电子显微镜观察发现,样品制备过程中不均匀的外加压强导致InPGaAs交界面局部出现了不连续过渡的空间层,实验上将熔融石蜡渗透并被填充到该空间层,利用其对3.509μm波长光的强烈吸收特性可表征这种局部的键合不连续区域,二维扫描测试样品不同区域的吸收谱得到3.509μm波长吸收强度等值线图,从而描绘出外加压强的不均匀分布.实验上通过改进键合装置的施压均匀性,得到了连续过渡界面且均匀键合的InPGaAs结构,利用这种均匀键合技术有望制备大尺寸器件例如光学微腔等.Direct wafer bonded InP-GaAs structures are studied by FTIR infrared absorbance spectra and FESEM cross-sectional observations. Experiments show that the non - uniformity of bonding pressure during the fabricating step results in the appearance of a spacer-layer at the InP-GaAs interface. By melting wax and filling it into this spacer-layer, locally unbonded areas can be characterized upon the optical absorbance peaks at 3. 509 μm. The 3. 509μm absorbance-intensity mapping images the nonuniform distribution of bonding pressure, which was obtained by two-dimensionally scanning measurement of infrared spectra of samples. Uniformly bonded InP-GaAs structures with uninterrupted interface are fabricated after improving the uniformity of pressure of fixture, which will be prospect of preparing for large scale wafer bonding structures such as optical micro-cavity structures.

关 键 词：晶片直接键合 界面 红外吸收光谱 直接键合 交界面 特性研究 结构 不均匀分布 电子显微镜观察 不连续区域 制备过程 

分 类 号：O472.1[理学—半导体物理]