SOI动态阈值MOS研究进展  

Overview of SOI DTMOS (Dynamic-Threshold MOSFET)

作　　者：毕津顺[1] 海潮和[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2005年第3期551-555,558,共6页Chinese Journal of Electron Devices

摘　　要：随着器件尺寸的不断缩小,传统MOS器件遇到工作电压和阈值电压难以等比例缩小的难题,以至于降低电路性能,而工作在低压低功耗领域的SOIDTMOS可以有效地解决这个问题。本文介绍了四种类型的SOIDTMOS器件,其中着重论述了栅体直接连接DTMOS、双栅DTMOS和栅体肖特基接触DTMOS的工作原理和性能,具体分析了优化器件性能的五种方案,探讨了SOIDTMOS存在的优势和不足。最后指出,具有出色性能的SOIDTMOS必将在未来的移动通讯和SOC等低压低功耗电路中占有一席之地。With the reduction of critical dimension, conventional MOSFET has met with a challenge that power supply and threshold voltage can not be scaled down at the same pace so that the performance of circuit is degraded, SOI DTMOS, which is a new type of MOS device applied in low-voltage and low-power VLSI , can resolve this problem effcctively. Four types of SOl DTMOS devices are introduced . The basic principle and performance of gate-body directly tied DTMOS, double gates DTMOS and gate-body tied by Schottky junction DTMOS are mainly described. The methods to improve the performance of SOl DTMOS are discussed, and the advantages and disadvantages of this kind of devices are listed. With excellent performance SOl DTMOS will find a place in the applications of mobile communication systems, SOC（system-on-a-chip） and so on.

关 键 词：SOI 低压低功耗 DTMOS 超大规模集成电路 

分 类 号：TP393.01[自动化与计算机技术—计算机应用技术]