GaAs／AlGaAs光子平行存贮器的性能  

Characteristics of GaAs/AlGaAs Photonic Parallel Memory

作　　者：夏永伟[1] 滕学公[1] 李国花[1] 樊志军[1] 王守武[1] 

机构地区：[1]集成光电子学国家重点实验室中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1996年第2期131-135,共5页半导体学报（英文版）

摘　　要：本文报告用ＰｎｐＮ型ＧａＡｓ／ＡｌＧａＡｓ结构的光电双稳器件形成的光子平行存贮器单元器件和４×４阵列器件的特性．单元器件的最小维持功耗小于３０μＷ．使器件从“关闭”态翻转到“导通”态所需的光触发功率小于８０μＷ．单元面积１６０×１６０μｍ、间距４０μｍ的存贮器４×４原理性阵列已经研制成功，这是０．８５μｍ波长范围的光子平行存贮器的首次报道．Abstract This paper reports the characteristics of cell and 4 × 4 array devices of PPM (Photonic Parallel Memory) formed by optoelectronic bistable devices with a type of GaAs/AlGaAs PnpN structure. An S-shape negative differential resistance region occurrs at the forward characteristic of the cell device. At the time the applied voltage is increased beyond the switch voltage the device is switched into the 'on' state. Infrared light is emitted from the top of the device in the 'on' state but not in the 'off' state. The minimum static holding power of a typical cell device is less than 30μW. After removing the input light, the bistable device is maintained in 'emissive' state till making supply voltage near zero. The input light power necessary to turn the device from 'off' to 'on' state is about 80μW. A 4× 4 principle array of PPM with a cell area of 160× 160 μm2 and a spacing between two neighboring cells of 40μm has been successfully fabricated. This is the first report on 2D PPM array in the wavelength range of 0. 85μm.

关 键 词：光子平行存储器 砷化镓 ALGAAS 存储器 性能 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]