红外光学材料硫化锌衬底上沉积金刚石膜的研究  

A study of diamond films depositing on multi-spectra ZnS

作　　者：高旭辉[1] 吕反修[1] 魏俊俊[1] 李成明[1] 陈广超[1] 余怀之[2] 

机构地区：[1]北京科技大学材料学院,北京100083 [2]北京有色金属研究总院国晶辉红外科技有限公司,北京100088

出　　处：《功能材料》2005年第9期1398-1400,共3页Journal of Functional Materials

摘　　要：采用微波等离子体化学气相沉积法,在预镀陶瓷过渡层的硫化锌衬底上沉积金刚石膜。在以前的实验中,我们发现在陶瓷过渡层上沉积金刚石膜极其困难,但采用金刚石诱导形核方法后,我们已经在过渡层/硫化锌试样表面获得了很小面积(约1mm宽的环状区域)的金刚石形核。本文对前期的诱导形核工作进行了一定改进,目前已经使形核生长范围大大增加,沉积面积超过原来10倍。此外,本文对金刚石/过渡层/硫化锌试样的红外透过特性以及金刚石膜质量等进行了评价。A ceramic interlayer suitable for diamond film deposition on multl-spectra ZnS substrate was prepared by electron beam evaporation. Diamond film deposition was conducted using microwave CVD method. It was found that diamond nucleation on the ceramic interlayer was extremely difficult. However, an induced nucleation technique was introduced, and diamond nucleation in a small area was obtained （a ring about 1 mm in width）. In the present investigation, a new study has been carried out to improve the effect of induced nucleation and the much more nucleation area has been obtained, which is more than ten times compared to the former. The quality of diamond film was presented by Raman spectrum. Furthermore IR spectrum of the diamond/ interlayer/ZnS sample was displayed.

关 键 词：硫化锌(ZnS) 金刚石膜 陶瓷过渡层 诱导形核 微波等离子体CVD 

分 类 号：TN213[电子电信—物理电子学] TN304.055