不同集电结结构的AlGaInP/GaAs异质结双极晶体管  

DC Performance of AlGaInP/GaAs HBT with Different Base/Collector Junction Structure

作　　者：李冰寒[1] 刘文超[1] 周健[1] 夏冠群[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《固体电子学研究与进展》2005年第3期294-298,314,共6页Research & Progress of SSE

摘　　要：设计并制备了三种不同集电结结构的A lG aInP/G aA s异质结双极晶体管,计算给出了三种集电结能带结构。通过对三种HBT的直流特性测试表明,N pN型HBT因异质集电结的导带尖峰出现电子阻挡效应;N p iN型HBT集电结引入i-G aA s层能有效克服电子阻挡效应,同时还具有拐点电压Vknee小、开启电压Voffset小、击穿电压BVCEO大等优点,但由于i-G aA s层引入增加了基区电子扩散长度,使器件电流增益有所下降。Three large-scale Heterojunction Bipolar Transistors with different base/collector junction structure have been fabricated by using AlGalnP/GaAs HBT material grown by MOCVD. The electron repelling effect of the conduction-band spike formed at the collector heterojunction was obtained at the transistors with a p^＋-GaAs/N-AlGalnP base/collector junction structure. To overcome this effect a thin i-GaAs layer was inserted between the base and the AlGalnP wide-gap collector. Transistors with a p^＋-GaAs/i-GaAs/N-AlGalnP base/collector junction structure show excellent current/voltage characteristics.

关 键 词：异质结双极晶体管 铝镓铟磷/砷化镓 直流特性 

分 类 号：TN325.3[电子电信—物理电子学]