InP基PHEMT欧姆接触低温合金化工艺的研究  

Reaserch of Low Temperature Alloyed Ohmic Contact on InP-Based PHEMT

作　　者：李潇[1,2] 张海英[2] 李海鸥[2] 尹军舰[2] 刘亮[2] 陈立强[2] 

机构地区：[1]四川大学物理科学与技术学院,成都610064 [2]中国科学院微电子研究所

出　　处：《半导体技术》2005年第10期15-18,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60276021)国家重点基础研究规划资助项目(G2002CB311901)

摘　　要：对InP基PHEMT的源漏欧姆接触低温合金化工艺进行了研究,与常规的合金工艺不同,通过在低温下进行合金化,并采用金属面倒置和快速热退火的办法,制成了比接触电阻为1.26×10-3Ω·cm2 形貌良好的欧姆接触。避免了PHEMT各层化合物半导体之间的相互作用和分解,以及能带结构变化引起的二维电子气退化,也大大减弱了高温带来的肖特基势垒层中的杂质元素往沟道内扩散引起二维电子气迁移率下降的问题。The low-temperature alloyed ohmic contact of source and drain of InP-based PHEMI is researched, Different from the traditional process, through alloying at low temperature and the method of reversed metal surface and fast anneal, a specific contact resistance of 1.26×10^-3Ω·cm^2 with good surface morphology is achieved. The interaction and decomposition of compound semiconductor and the degradation of 2DEG due to the change of energy band is avoided, The descend of mobility ratio of 2DEG due to the dopant of Schottky layer diffusing into channel witch is caused of high temperature were greatly improved.

关 键 词：磷化铟 赝配超晶格高电子辽移率晶体管 低温合金 欧姆接触 

分 类 号：TN305.93[电子电信—物理电子学]