一种半导体压力传感器  

A Semiconductor Piezoresistive Pressure Sensor

作　　者：张为[1] 姚素英[1] 张生才[1] 张维新[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《天津大学学报》2005年第10期901-903,共3页Journal of Tianjin University(Science and Technology)

基　　金：天津市自然科学基金资助项目(033600811).

摘　　要：根据有限元工具ANSYS的分析结果,设计了一种半导体压阻式压力传感器——绝缘体上硅(SOI)压力传感器,并完成了制作.测试表明,除具有良好的静态特性之外,与同类压力传感器相比,SOI压力传感器的工作温区宽,最高工作温度可达220℃;稳定性高,30d内的零点漂移小于0.2%;温度特性好,灵敏度温度系数约为-5.1×10-4/℃.此外传感器的结构简单,采用半导体集成电路平面工艺结合微机械加工技术制作,易于实现批量生产,有广阔的应用前景.According to the results of finite-element analysis with ANSYS, a piezoresistive pressure sensor based on silicon on insulator （SO1） was designed. Compared with other semiconductor piezoresistive pressure sensors, SO1 piezoresistive pressure sensor has a broader operating temperature range,as well as good static performance. Its highest operating temperature can reach 220℃. Moreover, the offset drift in 30 days and the temperature coefficient of sensitivity （ both referred to full scale output） are about 0.2 % and - 5. 1 × 10^ -4/℃ , respectively. The sensor has simple structures fabricated with integrated circuit （IC） planar processes and micromachining technology, and so batch productions can be easily realized.

关 键 词：绝缘体上硅 高温压力传感器 微机械加工 

分 类 号：TN379[电子电信—物理电子学]