激光剥离技术中GaN材料温度场的研究  

Study on temperature field of GaN material in laser lift-off technique

作　　者：王婷[1] 郭霞[1] 郭伟玲[1] 牛南辉[1] 沈光地[1] 

机构地区：[1]北京工业大学电控学院北京市光电子实验室,北京100022

出　　处：《激光杂志》2005年第5期80-81,共2页Laser Journal

基　　金：国家863计划(2004AA311030);国家973计划(20000683-02);北京市教委(KZ200510005003;2002kj018);北京市科委重点项目(D404003040221)资助

摘　　要：对使用脉冲激光实现GaN/Sapphire剥离技术,建立了激光剥离过程中GaN外延层一维热传导理论模型。计算分析了单脉冲辐照时,激光剥离过程中GaN外延层内的温度场分布。得到实现激光剥离阈值能量密度为400mJ/cm2,脉冲频率上限约为1400Hz,阈值条件下剥离过程中高温区分布限制在100nm以内。从而证明GaN基发光二极管(LED)外延结构无损伤激光剥离的可行性,并且为激光剥离技术参数的选取提供了理论依据。One - dimensional （ I - D） thermal conduction model in GaN layer for pulse laser lift - off technique was established. Irradiated by mono- pulse laser, the temperature field of the CaN layer was calculated and analyzed. The results show the threshold energy intensity for successful lift - off is predicted to be about 400mJ/cm^2, the pulse laser frequency is set to less than 1400Hz, and in the condition of threshold influence, the high temperature field is confined to 100nm, which＇provide theoretical basis for selecting all parameters in laser lift- off, and the realization of damage - free CaN- based LED Laser lift - off.

关 键 词：温度场 剥离 一维模型 脉冲激光 GAN 

分 类 号：TN312.8[电子电信—物理电子学]