深亚微米pMOS器件的HCI和NBTI耦合效应与物理机制  

Couple Effects and Physical Mechanism of HCI and NBTI in Deep Submicron pMOSFET’s

作　　者：刘红侠[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子学院

出　　处：《Journal of Semiconductors》2005年第9期1813-1817,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60206006);教育部重点科技研究(批准号:104172);国防重大预研基金(批准号:41308060305);博士后基金(批准号:Q6312573)资助项目~~

摘　　要：研究了深亚微米pMOS器件的热载流子注入(hot-carrier injection,HCI)和负偏压温度不稳定效应(negative bias temperature instability,NBTI)的耦合效应和物理机制.器件在室温下的损伤特性由HCI效应来控制.高温条件下,器件受到HCI和NBTI效应的共同作用,二者的混合效应表现为NBTI不断增强的HCI效应.在HCI条件下器件的阈值电压漂移依赖沟道长度,而NBTI效应中器件的阈值电压漂移与沟道长度无关,给出了分解HCI和NBTI耦合效应的方法.The couple effects and physical mechanism of HCI（hot-carrier injection） and NBTI（negative bias temperature instability） in deep submicron pMOSFET＇s are investigated. At room temperature the HCI contribution to the device damage is confirmed. However,at high temperatures the degradation is controlled by the cooperation of HCI and NBTI mechanism. NBTI channel hot-carrier enhancement is really observed. The threshold voltage shift depends on channel length under HCI stress, whereas the threshold voltage shift is not dependent on channel length for NBTI. A method to decouple the HCI and NBTI is presented.

关 键 词：深亚微米pMOS器件 热载流子注入 负偏压温度不稳定性 界面态 氧化层固定正电荷 

分 类 号：TN386[电子电信—物理电子学]