埋空隙PSOI结构的耐压分析  

Breakdown Voltage Analysis for Buried Air PSOI Structure

作　　者：段宝兴[1] 张波 李肇基[1] 罗小蓉[1] 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《Journal of Semiconductors》2005年第9期1818-1822,共5页半导体学报（英文版）

摘　　要：提出了一种埋空隙PSOI(APSOI)RESURF器件结构,此结构利用空隙相对低的介电系数,在器件纵向突破了传统SiO2埋层的耐压关系,提高了击穿电压;硅窗口的存在缓解了有源区的自热效应;不同衬底的场调制作用进一步优化了表面电场分布.在相同击穿电压条件下,此结构较一般PSOI结构只需1/4厚度的埋层,当漂移区厚度和埋层厚度均为2μm时可获得600V以上的击穿电压.A novel RESURF structure of buried air PSOI（APSOI） is developed. Its breakdown voltage is increased due to the low permittivity of the air gap by which the relation of breakdown voltage with a SiO2 buried layer in vertical part is broken. The self-heating effect is alleviated as a result of the silicon window and the surface electric field are optimized by different substrate electric field modulation. This structure only needs a 1/4 buried layer compared with a normal PSOI structure under the condition of a certain breakdown voltage. When the thickness of the drift region is 2μm and the thickness of the buried layer is 2μm,more than 600V of breakdown voltage can be obtained.

关 键 词：RESURF结构 APSOI 自热效应 表面电场 击穿电压 

分 类 号：TN386[电子电信—物理电子学]