DC反应磁控溅射制备VO_2薄膜及XPS分析  

Preparation of VO_2 thin films by reactive DC magnetron sputtering and analysis by XPS

作　　者：陈庆连[1] 陈长琦[1] 王君[1] 方应翠[1] 王旭迪[1] 

机构地区：[1]合肥工业大学机械与汽车工程学院,安徽合肥230009

出　　处：《合肥工业大学学报（自然科学版）》2005年第10期1260-1263,共4页Journal of Hefei University of Technology：Natural Science

摘　　要：文章通过改变玻璃基温度和靶基间距,采用m(O2)/m(A r)为1∶12.5,溅射功率为190 W,工作真空度为2.2 Pa,用DC磁控溅射法在玻璃基上沉积VO2薄膜,并经真空退火处理,制备的试样通过XPS测试分析薄膜表面的元素组成及成分。测试分析结果表明,基片温度在室温或超过350℃,易于生成VO2薄膜,真空退火可以显著改善制备薄膜的氧缺陷,提高V与O的化学计量比。The VO2thin films were deposited on the glass substrate using the DC magnetron sputtering method under the conditions that m（O2）/m（Ar） was 1 ： 12.5,the sputtered power 190 W,the working pressure 2.2 Pa,and both the substrate temperature and the distance between the .target and the substrate were varied. The deposited films were treated with vacuum annealing. Then the films were measured by XPS in order to analyze the composition and elements. It is shown that it is easy to prepare VO2 films at room temperature or above 350℃ on the substrate and vacuum annealing can significantly reduce oxygen defectiveness and improve the ratio of n （V）/n （O）.

关 键 词：反应磁控溅射 工艺参数 VO2薄膜 XPS分析 

分 类 号：TG156[金属学及工艺—热处理]