垂直沉积法在GaAs衬底上制备有序SiO_2胶体晶体  

Ordered SiO_2 Colloidal Crystals Grown on GaAs Substrates

作　　者：谭春华[1] 范广涵[1] 陈胜利[2] 周天明[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631 [2]石油大学重质油国家重点实验室,北京102249

出　　处：《光电子．激光》2005年第10期1223-1226,共4页Journal of Optoelectronics·Laser

基　　金：国家"973"预演资助项目(5130702)

摘　　要：报道了一种利用直径为286 nm的单分散SiO2胶体颗粒制备胶体晶体的方法。乙醇悬浮中的SiO2颗粒通过毛细作用力在垂直插入其中的GaAs衬底表面自组装成胶体晶体。扫描电子显微镜(SEM)和紫外-可见分光光度计对胶体晶体的形貌和光学特性进行了表征。结果显示,所得到的胶体晶体膜具有较好的三维有序结构。分析了退火对样品光子带隙的影响。A method for preparation of particle crystal films constructed from monodisperse SiO2 colloidal particles in diameter of 286 nm is reported. The films were prepared from an ethanol suspension by vertical deposition that relies on caplillary forces to assemble colloidal crystal particles on a vertical GaAs substrate. The 3-D ordered films were characterized by reflection spectra and scanning electr on the photonic band gap of colloidal particle c microscope（SEM）. The effect of sintering crystals was investigated.

关 键 词：蛋白石 胶体晶体 光子带隙 垂直沉积法 GAAS 

分 类 号：O484.1[理学—固体物理]