电力SITH阳极造型对耐电容量的影响及提高  

The influence and improvement of anode structure on blocking voltage of power SITH

作　　者：胡冬青[1] 李思渊[1] 王永顺[1] 

机构地区：[1]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《兰州大学学报（自然科学版）》2005年第5期77-79,共3页Journal of Lanzhou University(Natural Sciences)

摘　　要：分析了影响电力静电感应晶闸管阻断电压BVAK的因素,提出了提高BVAK的方法,并构造了几种阳极结构.在实验了3种结构的基础上,给出一种新阳极造型.它有效利用了外延过程中在p-阳极区形成的轻掺杂n-层,在该层上进行条形p+重掺杂,为正向导通过程提供空穴注入,从而实现电导调制,降低通态压降.而未掺杂的透明阳极区则形成电流漏.实验表明,该结构不仅能有效增大阻断电压,同时利于关断过程积累电荷的抽取,加快关断时间,降低关断损耗.First, the factors that influence the blocking voltage BVAK of power static induction thyristor （power SITH） are discussed and some new anode structures are proposed to improve it. From the experimental results, a new kind of anode is structured, which is based on p^＋np^- anode structure and striped p^＋ region and this new anode structure can reduce the anode injection and improve the blocking voltage. Meanwhile, the undoping transparent part of the anode forms a current drain. It is helpful for the charge extraction from the base during the device turn-off and cuts the tail current as well as turn-off losses.

关 键 词：电力SITH 阻断电压 阳极造型 关断损耗 

分 类 号：TN386.6[电子电信—物理电子学]