云南高校图书馆联盟文献共享服务平台- 胡冬青

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静电感应晶闸管的负阻转折特性被引量：1: 《电子器件》2007年第1期54-56,共3页唐莹刘肃李思渊胡冬青常鹏杨涛; 甘肃省自然科学基金资助项目(3ZS051-A25-034); 针对静电感应晶闸管SITH在正向阻断态下加负栅压,当阳极电压增加到一定程度后I-V特性出现负阻转折的特性,以一种全新的角度,从SITH的作用机理出发,考虑双注入效应,考虑载流子寿命的变化,对负阻现象进行了物理分析,并计算了负阻转折电压...; 关键词：SITH 负阻转折特性少子寿命大注入

电力SITH阳极造型对耐电容量的影响及提高被引量：1: 《兰州大学学报（自然科学版）》2005年第5期77-79,共3页胡冬青李思渊王永顺; 分析了影响电力静电感应晶闸管阻断电压BVAK的因素,提出了提高BVAK的方法,并构造了几种阳极结构.在实验了3种结构的基础上,给出一种新阳极造型.它有效利用了外延过程中在p-阳极区形成的轻掺杂n-层,在该层上进行条形p+重掺杂,为正向导通...; 关键词：电力SITH 阻断电压阳极造型关断损耗

光纤光栅传感特性的研究: 《信息通信》2005年第3期39-41,共3页胡冬青; 通过对光纤光栅传感技术的研究,分析了光纤光栅的温度、应变传感特性,对光纤光栅的应变.温度传感特性进行了实验研究,论证了光纤光栅传感技术用于应变测量的可行性。; 关键词：光纤光栅应变传感特征温度传感特性

Analysis on Characteristic of Static Induction Transistor Using Mirror Method: 《Journal of Semiconductors》2005年第2期258-265,共8页胡冬青李思渊王永顺; A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined...; 关键词：static induction transistor mirror method I-V characteristic

Study on Synchro-Epitaxy of Poly-and Single Crystal Silicon: 《Journal of Semiconductors》2004年第11期1381-1385,共5页胡冬青李思渊王永顺; Synchro-epitaxy is introduced and a “two periods epitaxy” process is proposed.The influence of the flows of SiH 4 N 1,N 2,deposition time t 1,t 2,and epitaxial temperature T on epilayer quality (embodied by α)...; 关键词：synchro-epitaxy NUCLEATION CVD

Electrical Performance of Static Induction Transistor with Mixed I-V Characteristics: 《Journal of Semiconductors》2004年第3期266-271,共6页王永顺刘肃李思渊胡冬青; The mixed non-saturating I-V characteristics of static induction transistor (SIT) are investigated.The optimum matching relations among the structural,material,and technological parameters are also presented.The techn...; 关键词：static induction transistor PINCH-OFF mixed characteristics SATURATION

Static Induction Devices with Planar Type Buried Gate被引量：1: 《Journal of Semiconductors》2004年第2期126-132,共7页王永顺李思渊胡冬青; Based on the surface-gate and buried-gate structures,a novel buried-gate structure called the planar type buried-gate (PTBG) structure for static induction devices (SIDs) is proposed.An approach to realize a buried-ga...; 关键词：static induction device planar type buried gate structure blocking voltage limiting field ring

A Microwave High Power Static Induction Transistor with Double Dielectrics Gate Structure: 《Journal of Semiconductors》2004年第1期19-25,共7页王永顺李思渊胡冬青; The designing approaches and key fabricating technologies for high frequency high power double dielectrics gate static induction transistor (DDG SIT) with mixed non-saturating I-V characteristics are presented.The eff...; 关键词：static induction transistor double dielectrics gate synchronous epitaxy parasitic capacitance

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