PINCH-OFF

作品数：8被引量：5H指数：1
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相关领域：电子电信更多>>
相关作者：李思渊胡冬青王永顺刘肃丁航更多>>
相关机构：兰州大学北京大学中国科学技术大学更多>>
相关期刊：《Acta Mechanica Sinica》《Chinese Physics B》《Journal of Semiconductors》《Fluid Dynamics & Materials Processing》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划更多>>
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Numerical Simulation of Droplet Generation in Coaxial Microchannels
《Fluid Dynamics & Materials Processing》2024年第3期487-504,共18页Zongjun Yin Rong Su Hui Xu 
funded by University Natural Science Research Project of Anhui Province,Grant Numbers (KJ2020A0826,2022AH051885,2022AH051891,2022AH030160,62303231);Intelligent Detection Research Team Funds for the Anhui Institute of Information Technology,Grant Number (AXG2023_kjc_5004).
In this study,numerical simulations of the pinching-off phenomena displayed by the dispersed phase in a continuous phase have been conducted using COMSOL Multiphysics(level-set method).Four flow patterns,namely“drop ...
关键词：Droplet generation characteristics coaxial microchannels flow patterns pinch-off length 
Passive scalar mixing induced by the formation of compressible vortex rings被引量：2
《Acta Mechanica Sinica》2020年第6期1258-1274,I0003,共18页Haiyan Lin Yang Xiang Hui Xu Hong Liu Bin Zhang 
We wish to acknowledge the support of the National Natural Science Foundation of China(NSFC)Project(Grant 91441205);the National Science Foundation for Young Scientists of China(Grant 51606120).
This study aims to determine the relationship between the physical features of a compressible vortex and the mixing process.Such relationship is of significant importance to design combustors that can achieve optimal ...
关键词：Vortex ring Finite-time Lyapunov exponent(FTLE) ENTRAINMENT PINCH-OFF 
Pinch-off voltage modeling for CMOS image pixels with a pinned photodiode structure被引量：1
《Journal of Semiconductors》2014年第7期90-96,共7页曹琛 张冰 吴龙胜 李炘 王俊峰 
A novel analytical model of pinch-off voltage for CMOS image pixels with a pinned photodiode structure is proposed. The derived model takes account of the gradient doping distributions in the N buried layer due to the...
关键词：pinned photodiode pixel design pinch-off voltage analytical model 
Backgating effect in GaAs FETs with a channel–semi-insulating substrate boundary被引量：1
《Journal of Semiconductors》2014年第3期33-38,共6页Ahmed Chaouki Megherbi Said Benramache Abderrazak Guettaf 
This study focuses on modeling the effects of deep hole traps, mainly the effect of the substrate（backgating effect） in a GaAs transistor MESFT. This effect is explained by the existence, at the interface, of a spac...
关键词：traps pinch-off voltage resistance channel substrate interface 
Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier:an improved Schottky rectifier with better reverse characteristics被引量：1
《Chinese Physics B》2011年第8期376-383,共8页李惟一 茹国平 蒋玉龙 阮刚 
Project supported by the International Research Training Group "Materials and Concepts for Interconnects and Nanosystems"
An improved structure of Schottky rectifier, called a trapezoid mesa trench metal oxide semiconductor （MOS） barrier Schottky rectifier （TM-TMBS）, is proposed and studied by two-dimensional numerical simulations. B...
关键词：Schottky rectifier pinch-off effect breakdown power device 
An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor
《Journal of Semiconductors》2010年第7期53-56,共4页李斌桥 于俊庭 徐江涛 于平平 
Project supported by the National Natural Science Foundation of China(Nos.60806010,60976030);the Tianjin Innovation Special Funds for science and Technology,China(No.05FZZDGX00200).
An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented.This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well struct...
关键词：pinch-off voltage CMOS image sensor photon shot noise pixel design 
Electrical Performance of Static Induction Transistor with Mixed I-V Characteristics
《Journal of Semiconductors》2004年第3期266-271,共6页王永顺 刘肃 李思渊 胡冬青 
The mixed non-saturating I-V characteristics of static induction transistor (SIT) are investigated.The optimum matching relations among the structural,material,and technological parameters are also presented.The techn...
关键词：static induction transistor PINCH-OFF mixed characteristics SATURATION 
Influence of Device Narrowing on HALO-pMOSFETs' Degradation Under V_g= V_d/2 Stress Mode
《Journal of Semiconductors》2003年第12期1255-1260,共6页胡靖 赵要 许铭真 谭长华 
国家重点基础研究发展规划资助项目 (No.G2 0 0 0 0 3 65 0 3 )~~
The degradation characteristics of both wide and narrow devices under V _g= V _d/2 stress mode is investigated.The width-enhanced device degradation can be seen with devices narrowing.The main degradation mechanism is...
关键词：width-enhanced degradation pinch-off voltage current-crowding effect 
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