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作 者:李玉国[1] 薛成山[1] 庄惠照[1] 石礼伟[1] 张洁珊[1] 曹玉萍[1] 孙钦军[1]
机构地区:[1]山东师范大学半导体研究所,山东济南250014
出 处:《半导体光电》2005年第5期425-427,共3页Semiconductor Optoelectronics
摘 要:在Si(111)衬底上热氧化射频磁控溅射金属锌并经退火处理后,成功制备出ZnO纳米棒。用XRD,SEM和TEM对样品的晶体结构、表面形貌进行了研究。经PL谱分析表明,在波长为280 nm的光激发下,在372 nm处有强近带边紫外光发射和516 nm处的较微弱深能级绿光发射。With radio frequency (RF) magnetron sputtering,ZnO nanorods are succesfully synthesized by oxidating metal zinc thin films on Si (111) substrates. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and photoluminescence are employed to determine the structure, morphology and optical properties of the nanorods. Results show that the synthesized ZnO nanorods have a single-crystal hexagonal wurtzite structure. The diameters of the nanorods range from 30 nm to 60 nm,and the lengths of the nanorods are 2-8 μm. Under 280 nm light excitation, a strong and sharp near band-edge UV light emission band at 372 nm and a relatively weak green deep-level light emission band at 516 nm are observed from the ZnO nanorods, which indicates excellent crystallization and optical quality of the as-grown ZnO nanorods.
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