LDMOS低功耗自恢复电平移位电路设计  

A Lower Power Consumption,Self Returning Voltage Level Shifter Circuit Implemented with LDMOS

作　　者：邓兰萍[1] 王纪民[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2005年第10期2028-2031,共4页半导体学报（英文版）

摘　　要：设计了一个新型的薄栅氧、低功耗、自恢复的电平移位栅电压控制电路.在20V工作电压下,n沟道和p沟道LDMOS高压器件的栅源电压Vgs分别保持在±5V.当一个选址周期结束后,电路能自动复位而不需增加任何复位器件和电路.该电路为高低压兼容,采用标准0.5μmCMOSLDMOS兼容工艺制造,可用于OLED显示的驱动控制.A new voltage level shifter circuit with thin gate oxide,low power consumption and self-returning ability is designed. With a supply of 20V,the control signal Vgs for high voltage n-channel and p-channel LDMOS are ± 5V respectively. Having finished one addressing cycle,this circuit can return by itself without any extra device or circuit. This circuit is compatible with both high and low voltage circuits. It is designed with standard 0.5μm CMOS-LDMOS technology and is applicable for the OLED driver circuit.

关 键 词：薄栅氧 低功耗 自恢复 电平移位 LDMOS 

分 类 号：TN386[电子电信—物理电子学]