缓冲层用于改善硅基氮化镓外延薄膜质量  

The Study of Buffers Used in The Growth of GaN on Si Substrate by MOCVD

作　　者：雷勇[1] 范广涵[1] 李述体[1] 谭春华[1] 黄琨[1] 郑树文[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631

出　　处：《光电子技术与信息》2005年第5期20-25,共6页Optoelectronic Technology & Information

基　　金：国家科技攻关计划资助项目(00-068)

摘　　要：介绍了GaN材料的基本特性及重要意义,讨论了在Si衬底上外延GaN的可取之处以及存在的主要问题。详细阐述了各种不同材料以及不同结构的缓冲层应用于MOCVD方法在Si衬底上外延GaN,及其所取得的最新成果。对缓冲层降低应力的机制进行了说明。The characteristics and the great importance of GaN were introduced. The advantages and the main problems of GaN grown Si substrate have been explained. Also, various buffer materials and buffer structures used in the growth of GaN by MOCVD system were expounded. Finally the machnisms of the the buffer＇s decreasing the strain were discussed.

关 键 词：缓冲层 GAN SI MOCVD 

分 类 号：TN304[电子电信—物理电子学]