粉体纯化装置及工艺研究  

Study on Device and Technology for Particulate Purifying

作　　者：王敬义[1] 尹盛[1] 陶甫廷[2] 吴京波 冯信华[1] 苏睿[2] 许淑慧[2] 陈正强[2] 陈文辉[2] 罗文广[2] 

机构地区：[1]华中科技大学,湖北武汉430074 [2]广西工学院,广西柳州545006 [3]湖南长沙万全科技开发有限公司,湖南长沙410007

出　　处：《稀有金属材料与工程》2005年第10期1653-1656,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金资助项目(10265002)

摘　　要：根据硅粉纯化的要求,提供了一种长落程和高反应速率的冷等离体反应器。工艺参数的选择着重于增大鞘层厚度、提高反应粒子浓度和控制抽气速率,因此,能有效的提高纯化反应的速率、粉料的回收率和粉粒一次沉降的时间。实验结果表明:该设备能将纯度为99%的工业硅纯化为约99.99%的太阳级硅。According to the purity requirement for Si powder, a cold plasma reaction chamber with long drop distance and high reaction rate is provided in the paper. In the selection of technology parameter, we put stress on increasing the thickness of sheath, raising the densities of reaction particles, and controlling the speed of pump. The purifying rate, collective ratio, and drop time of Si powder were raised effectively as a consequence of these selections. The experimental results show that solar grade Si （4N） can be gotten from industrial Si （Melatturgical grade Si-2N） in the plasma system.

关 键 词：等离子体纯化 纯化反应 表面刻蚀 

分 类 号：TN304[电子电信—物理电子学]