ICP刻蚀技术在MEMS器件制作中的应用  

Application of ICP Etching Technology in MEMS Field

作　　者：李伟东[1] 张建辉[2] 吴学忠[1] 李圣怡[1] 

机构地区：[1]国防科技大学机电工程与自动化学院,长沙410073 [2]国防科技大学航天与材料工程学院,长沙410073

出　　处：《微纳电子技术》2005年第10期473-476,共4页Micronanoelectronic Technology

摘　　要：简单介绍了ICP刻蚀系统和刻蚀原理。通过实验分析了ICP刻蚀SiO2和Cr时,刻蚀速率随相关工艺参数变化而变化的几点规律。同时给出了用ICP刻蚀出的MEMS传感器Si基腔的表面形貌图和Cr电阻的显微镜照片。The ICP etching system and principle were introduced. Some rules of etching rate varied with the changing of the related process data were analyzed, when doing SiO2 and Cr membranes ICP etching by this system. The AFM morphology images of Si based cavity MEMS sensor and Cr resistance etched by ICP were given.

关 键 词：微机电系统 感应耦合等离子体刻蚀 刻蚀速率 

分 类 号：TH16[机械工程—机械制造及自动化]