SU-8胶光刻工艺参数优化研究  

Process Optimization of Optical Lithography of SU-8 Photoresist

作　　者：张晔[1] 陈迪[1] 张金娅[1] 倪智萍[1] 朱军[1] 刘景全[1] 

机构地区：[1]上海交通大学微纳科学技术研究院微米/纳米加工技术国家级重点实验室薄膜与微细技术教育部重点实验室,上海200030

出　　处：《微细加工技术》2005年第3期36-41,80,共7页Microfabrication Technology

基　　金：国家科技部863资助项目(2004AA404260)

摘　　要：对基于SU-8胶的UV-LIGA技术进行了工艺优化,研究了光源波长和曝光时间对SU-8胶成型的影响。结果表明,光刻胶表面线宽变化随曝光时间增加先减少后增加,有一个极小值;侧壁角度先增加后减少,有一个极大值。通过优化光源波长、曝光时间以及显影时间三个主要工艺参数,可以获得侧壁角度为90.64°正角的300μm厚光刻胶微结构和侧壁角度为89.98°近似垂直的500μm厚光刻胶微结构。Process parameters of SU-8 photoresist based U V-LIGA technique were optimized. The influences of expose time and the wavelength of expose source （on the resist formation） were investigated. The line width of photoresist surface first decreased then increased with expose time. It has a minimum. The sidewall angle first increased then decreased with expose time. It has a maximum. We have optimized the process parameters like wavelength of expose source, expose time and developing time to fabricate 300 μm-thickness microstructures with sidewall angle of 90.64° and those of 500 μm-thickness with sidewall of 89.98°.

关 键 词：UV-LIGA技术 SU-8胶 高深宽比 微结构 

分 类 号：TN23[电子电信—物理电子学]