激光单条扫描定域再结晶SOI技术研究  

Research on Technology of Local Recrystallization SOI by Laser Single Scanning

作　　者：王红卫[1] 杨景铭[1] 钱佩信[1] 

机构地区：[1]清华大学微电子学研究所

出　　处：《电子学报》1996年第2期22-27,共6页Acta Electronica Sinica

基　　金：国家攀登计划研究课题

摘　　要：本文描述了用于制作三维集成电路（３Ｄ－ＩＣ）的激光再结晶工艺的实验装置和工艺过程，报道了反射条结构样品的单条扫描定域再结晶的实验结果并作了相应的讨论。实验表明，再结晶质量与激光功率、预热温度、高反区条宽以及激光扫描速率等因素有关，并受到工艺稳定性的影响；利用激光单条扫描定域再结晶技术已获得１２μｍ宽度、芯片长度的能用以制作高性能ＭＯＳ－ＦＥＴ的ＳＯＩ单晶条。This paper describes the experimental equipment and technical process of laser-recrystallization for three dimensional integrated circuit(3D-IC),reports the experimental results of local recrystallization by laser single scanning on samples with reflective-stripe structure,and makes some discussion about these results.The experimental results indicate that the quality of recrystallization is related to laser power.preheating temperature,width of stripes with high reflectivity and scanning velocity of laser.Also,the stability of technique affects the quality.With technology of local recrystallization by single laser scanning, long single-crystal SOI(silicon-on-insulator) stripes which can be used to make high-quality MOSFET have been obtained.

关 键 词：三维 集成电路 SOI 激光再结晶 制造工艺 

分 类 号：TN430.5[电子电信—微电子学与固体电子学]