双向负阻器件的数值模拟  

Numerical Analysis of Bidirectional Negative Resistance Device

作　　者：李建军[1] 魏希文[1] 王美田[1] 李风银 王化雨 盖学敏 

机构地区：[1]大连理工大学半导体研究室,辽宁朝阳无线电元件厂

出　　处：《电子学报》1996年第2期66-69,共4页Acta Electronica Sinica

基　　金：国家自然科学基金

摘　　要：本文通过对双向负阻器件进行数值模拟，分析了其产生负阻的内部图象，模拟结果表明，高阻集电区厚度的减小或衬底杂质浓度的增加使负阻曲线的摆幅增大，而基区掺杂浓度的提高将使负阻曲线的峰值减小。Through numerical simulation of bidirectional negative resistance device(BNRD),the internal picture of BNRD to produce negative resistance has been analyzed.The results show that:1.The amplitude of the negative resistance curve becomes large as the thickness of the high resistance collector region decreases or the dopant concentration of substrate increases.2.The peak of the negative resistance curve decreases as the dopant concentration of base region increases.

关 键 词：负阻器件 数值模拟 半导体器件 

分 类 号：TN389[电子电信—物理电子学]