高电子迁移率晶体管器件模型  

Device Models for High Electron Mobility Transistors

作　　者：刘诺[1] 谢孟贤[1] 

机构地区：[1]电子科技大学

出　　处：《微电子学》1996年第2期107-111,共5页Microelectronics

摘　　要：（Ａｌ．Ｇａ）Ａｓ－ＧａＡｓ高电子迁移率晶体管（ＨＥＭＴ）具有跨导大、截止频率高、噪声低、开关速度快以及功耗低等特点。是一种比ＭＥＳＦＥＴ优越的新型器件。在器件模拟这一领域，已经发展了一维分析模型、二维数值模型或半数值模型以及针对小尺寸器件的ＭｏｎｔｅＣａｒｌｏ模型。对部分一维和二维器件模型作了综合介绍和分析。The GaAs high electron mobility transistor(HEMT), featuring high transconductance, high cut-off frequency, high switching speed, low-noise and low power dissipation,is a kind of new device superior to MESFET's. For its device modeling, 1-dimensional analytical models, 2dimensional numeric or semi-numeric models and Monte Carlo models for small feature size device have been developed in recent years. Some of these models are examined and analyzed.

关 键 词：高电子迁移率 晶体管 器件模拟 砷化镓 

分 类 号：TN325.3[电子电信—物理电子学]