脉冲激光法淀积MgO薄膜及其结晶性能的研究  

Pulsed Laser Deposition of MgO Films and Its Crystallinity

作　　者：陈同来[1] 李效民[1] 张霞[1] 高相东[1] 于伟东[1] 

机构地区：[1]中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室,上海200050

出　　处：《无机材料学报》2005年第6期1475-1480,共6页Journal of Inorganic Materials

基　　金：国家973项目(2002CB613306)

摘　　要：研究了脉冲激光淀积MgO薄膜的过程中,制备工艺参数对薄膜结晶性的影响.研究发现,MgO薄膜的结晶性主要受控于衬底温度和激光能量密度,而薄膜的生长速率则依赖于脉冲频率、衬底与靶材间的距离以及激光能量密度.通过对比不同靶材,即金属Mg靶和烧结陶瓷MgO靶,对薄膜结晶性的影响,发现通过添加一层TiN籽晶层可以显著改善薄膜的结晶质量.最后在优化的制备工艺参数:衬底温度TS=873K,激光能量密度DE=7J/cm2,靶材与衬底间距离DST=70mm,激光脉冲频率FL=5Hz以及采用烧结陶瓷MgO靶材和添加TiN籽晶层的情况下,获得层状生长模式和表面具有原子级平整度的MgO薄膜.Systematic investigation of preparation-parameter dependence of MgO films＇ crystallinity during pulsed-laser depositon of MgO films was carried out. It is found that MgO films＇ crystallinity is mainly affected by substrate temperature and laser fluence, while the growth velocity of MgO films is dominated by pulse frequency, substrate-target distance and laser fluence. By comparison of the influence of metallic Mg target and sintered MgO target on the films＇ cystallinity, it also found that, via inserting a TiN seed layer, the crystalline quality of MgO films can be greatly improved. Finally, under the optimal preparation-parameter conditions： TS=873K, DE=7J/cm^2, DST=70mm, FL=5Hz, employing sintered MgO target and inserting a TiN seed layer, atomically smooth MgO films grown with layer-by-layer mode can be successfully obtained.

关 键 词：脉冲激光淀积 MgO薄膜 硅衬底 RHEED 

分 类 号：O482[理学—固体物理]