CMOS电路低温特性及其仿真  

CRYOGENIC TEMPERATURE CHARACTERISTICS AND SIMULATION OF CMOS CIRCUITS

作　　者：周鹏[1] 冯一军[1] 

机构地区：[1]南京大学电子科学与工程系,南京210098

出　　处：《低温物理学报》2005年第4期331-337,共7页Low Temperature Physical Letters

摘　　要：本文采用0.25微米工艺制备了CMOS器件和电路,通过对300K、77K和4K温度下器件和电路特性的测量,研究了工作温度降低对CMOS电路特性的影响.通过讨论MOSFET器件和互连线主要特性参数随温度的变化情况,修改了常温CMOSBSIM3模型以及互连线参数,建立了77K、4K温度下的低温电路仿真模型.利用上述新建立的低温电路仿真模型对CMOS电路进行仿真,并将仿真结果与实际测量结果比较,获得了比较一致的结果.研究表明在4K温度下CMOS电路的工作性能大约有50%到60%的改善.Short channel MOSFET devices and circuits based on a commercial 0. 25 m CMOS process have been fabricated and tested at cryogenic temperature. By taking into account of the main parameter variations of discrete MOSFET devices and interconnect wires, we have modified the room temperature CMOS BSIM3 model and established cryogenic temperature CMOS models. We have simulated the MOSFET devices and 31-stage ring oscillators by using the established cryogenic temperature models. The simulations fit the experimental results roughly well. The ring oscillator＇s period has been reduced at cryogenic temperature, 50%～60% improvement of the circuit performance can be obtained at 4K.

关 键 词：CMOS器件 载流子冻析效应 互连线 环形振荡器 CMOS电路 仿真模型 低温特性 MOSFET器件 CMOS器件 BSIM3模型 温度降低 电路特性 实际测量 

分 类 号：TN432[电子电信—微电子学与固体电子学] TP391.9[自动化与计算机技术—计算机应用技术]