AlGaN/GaN High Electron Mobility Transistors on Sapphires with f_(max) of 100GHz  

f_(max)为100GHz的蓝宝石衬底AlGaN/GaN高电子迁移率晶体管(英文)

作　　者：李献杰[1] 曾庆明[1] 周州[1] 刘玉贵[1] 乔树允[1] 蔡道民[1] 赵永林[1] 蔡树军[1] 

机构地区：[1]河北半导体研究所,石家庄050051

出　　处：《Journal of Semiconductors》2005年第11期2049-2052,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划(批准号:51327030201);国家自然科学基金(批准号:60136020)资助项目~~

摘　　要：AIGaN/GaN high electron mobility transistors grown on sapphire substrates with a 0.3μm gate length and 100μm gate width are fabricated. The device reveals a drain current saturation density of 0.85A/mm at a gate voltage of 0V and a peak transconductance of 225mS/mm. The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 45 and 100GHz,respectively. The output power density and gain are 1.8W/mm and 9.5dB at 4GHz,and 1.12W/mm and 11.5dB at 8GHz.制作了蓝宝石衬底上生长的AlGaN/GaN高电子迁移率晶体管.0V栅压下,0·3μm栅长、100μm栅宽的器件的饱和漏电流密度为0·85A/mm,峰值跨导为225mS/mm;特征频率和最高振荡频率分别为45和100GHz;4GHz频率下输出功率密度和增益分别为1·8W/mm和9·5dB,8GHz频率下输出功率密度和增益分别为1·12W/mm和11·5dB.

关 键 词：AIGAN/GAN HEMT SAPPHIRE 

分 类 号：TN32[电子电信—物理电子学]