射频等离子体化学气相沉积择优取向膜的研究  

The Preferred Orientation Films Deposited by RF-PCVD

作　　者：谢雁[1] 李世直[1] 

机构地区：[1]青岛化工学院等离子体表面技术研究所

出　　处：《真空电子技术》1996年第3期9-11,共3页Vacuum Electronics

摘　　要：用Ｘ－衍射的方法分析影响射频等离子体沉积择优取向的ＴＩＮ膜，取向的原因。A system for RF-PCVD of TiN films was described and rocking curve measurements were used for characterizing the degree of preferred orientation of the TiN films.The influences of deposition temperature,deposition time and RF power input on the preferred orientation of the film were discussed.

关 键 词：氮化钛膜 回摆曲线 择优取向 射频等离子体 

分 类 号：TN136[电子电信—物理电子学]