用相干激光束曝光孔点阵列图形的几种方法  

Methods for patterning hole or dot arrays with coherent laser beams

作　　者：张锦[1] 冯伯儒[1] 郭永康[2] 刘娟[1] 

机构地区：[1]中国科学院光电技术研究所微细加工光学技术国家重点实验室,成都610209 [2]四川大学物理系,610064

出　　处：《应用激光》2005年第5期327-328,共2页Applied Laser

基　　金：国家自然科学基金(60276043#)资助项目

摘　　要：将涂有光致抗蚀剂的硅片或其它光敏材料置于由多束相干光以某种方式组合构成的干涉场中,可以在大视场和深曝光场内形成孔、点或锥阵周期图形,光学系统简单廉价,不需掩模和高精度大NA光刻物镜,采用现行抗蚀剂工艺。文中介绍的双光束双曝光法得到的阵列图形周期d的极限为dm i n=λ/2,四光束单曝光的周期略大,为前者的2倍,三光束单曝光得到2/3 d周期的图形,并且图形不受基片在曝光场中位置的影响,适合大面积尺寸器件中周期图形的制作,而三光束双曝光和五光束曝光的结果是周期为2d的阵列图形,并且沿光轴方向光场随空间位置也作周期变化,适合在大纵深尺寸范围内调制物体结构。Hole and dot or cone arrays can be patterned over large and deep field when putting photosensitive material or silicon wafer coated photoresist into inference field caused by several coherent lights. Optical system configuration is simpler without mask and complex large NA projective lens system, and photoresist process is compatible with conventional IC process. Several methods are presented in this paper. The period ds limit of the array patterns obtained by dual-exposure with dual-beam is λ / 2, it is √2 times by single exposure with four-beam, tri-beam single exposure can get 2/√3d periodic pattern. Exposure result is not dependent of the position of substrate in interference field, these three methods are suited for fabricating micro periodic pattern in large size device. The period of arrays is 2d by double-exposure with tri-beam or five beams simultanously exposure, and the exposure dose is also periodically alternate changed along the optical axis. The latter two methods are suited for modulating the material index in deep field for 3D microstructure pattern production, such as for 3D photonic crystal formation.

关 键 词：激光干涉光刻 无掩模 光刻技术 

分 类 号：TN241[电子电信—物理电子学] O436.1[机械工程—光学工程]