集成电路制备中化学机械全局平面化(CMP)后的表面清洗技术  

Post CMP cleaning technology in the fabrication of integrated circuits

作　　者：李薇薇[1] 刘玉岭[1] 王胜利[1] 李广福[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《清洗世界》2005年第11期22-26,共5页Cleaning World

摘　　要：论述了集成电路制备中CMP过程带来污染的重大危害,介绍了目前CMP后清洗所面临的两大新挑战,同时对CMP后清洗的现状做出了分析,提出了存在的问题,并且对未来清洗的方向进行了展望。In this article the great harm of contaminations resuhed from CMP was explained. The two mew challenges of post CMP cleaning were introduced. The current situation and existent problems were analyzed. Meanwhile, the developing direction was forecasted.

关 键 词：集成电路 CMP 清洗 污染 

分 类 号：TN405[电子电信—微电子学与固体电子学]