反射条结构激光再结晶SOI的微结构研究  

Study on the Microstructure of Laser-Recrystallization SOI with Reflecting-Stripe

作　　者：刘峥[1] 邵贝羚[1] 李永洪[1] 王红卫[1] 杨景铭[1] 钱佩信[1] 

机构地区：[1]北京有色金属研究总院,清华大学微电子学研究所

出　　处：《电子学报》1996年第8期15-18,共4页Acta Electronica Sinica

摘　　要：用平面和横断面电子显微术研究了反射条结构激光再结晶ＳＯＩ（ＳｉｌｉｃｏｎｏｎＩｎｓｕｌａｔｏｒ）的微结构和微缺陷，实验观察表明，正常工艺条件下，经激光再结晶处理后硅膜可分为三个不同的区域：中间为单晶区，膜面取向为［１００］；两侧为再结晶大晶粒区；最外侧为尚未再结晶的多晶区．当工艺条件不适当时，在＂单晶区＂中存在亚晶界和大角晶界；在＂单晶区＂两侧，有排列整齐的１８０°微孪晶，孪晶面为｛１１１｝．再结晶大晶粒的取向没有规律性，多晶区由具有明显织构的柱状晶组成，文中讨论了缺陷出现的原因．The microstructures and micro-defects in laser-recrystallization SOI (Silicon on Insulator) with reflecting-stripe structure have been studied using plane-view and cross-section electron microscopy. The experimental results indicate that the silicon film laser-recrystallized under the normal processing conditions can be divided into three distinct regions:monocrystal with [100] orientation in the middle of the melted zone ,recrystallized large grains in the both sides of the monocrystal and polycrystal zone in the most outside side. When the processing is not proper, subgrain boundaries and large angle grain boundaries appear in 'monocrystal region'; 180°microtwins arrayed regularly on both sides of the 'monocrystal region' can be observed sometimes, and their twin planes are {111}. The orientations of the large grains are not regular. The polycrystal region consists of columnar grains with obvious texture. The cause of the defect formation is also discussed in this paper.

关 键 词：SOI 激光再结晶 微结构 微缺陷 

分 类 号：TN241[电子电信—物理电子学]