双极晶体管g－r噪声模型与深能级分析  

g-r Noise Modeling and Deep-Level Analysis for Bipolar Transistors

作　　者：庄奕琪[1] 孙青[1] 侯洵[1] 

机构地区：[1]西安电子科技大学微电子研究所,中国科学院西安光学精密机械研究所

出　　处：《电子学报》1996年第8期111-114,共4页Acta Electronica Sinica

摘　　要：本文根据发射结空间电荷区深能级缺陷诱生ｇ－ｒ噪声机构，建立了双极晶体管ｇ－ｒ噪声定量分析模型，从而对实验上观察到的双极晶体管ｇ－ｒ噪声的偏置特性作出了合理的解释．基于该模型，提出了一种利用ｇ－ｒ噪声测量确定双极型器件深能级参数的新方法．The physical mechanism of g-r noise induced by deep-level defects in the emitter space-charge region for bipolar transistors is analyzed quantitatively and a new model on g-r noise in bipolar transistors is developed. The experimental dependence of g-r noise on the bias voltage is explained from the model. Based on the model,the deep-level parameters in bipolar devices are determined by means of g-r noise measurement.

关 键 词：G-R噪声 双极晶体管 深能级 

分 类 号：TN322.8[电子电信—物理电子学]