GaAs MESFET的热电子应力退化  

The hot electron degradation of GaAs MESFET

作　　者：朱炜容[1] 黄云[2] 黄美浅[1] 钮利荣[3] 

机构地区：[1]华南理工大学物理科学与技术学院,广东广州510640 [2]信息产业部电子第五研究所,广东广州510610 [3]南京电子器件研究所,江苏南京210016

出　　处：《电子产品可靠性与环境试验》2005年第6期32-35,共4页Electronic Product Reliability and Environmental Testing

摘　　要：进行GaAs MESFET的热电子应力试验,在24V≤V_(DS)≤28V,-5．5V≤V_(CS)≤-4V 的应力条件下,热电子效应将导致 GaAs MESFET 直流参数的严重退化。退化模式主要表现为饱和漏电流 I_(DSS)减小,跨导 g_m 减小, 夹断电压 V_P 增大,击穿电压增大。从微波性能方面来看,热电子效应器件的输出功率增益大幅度下降。退化机理主要是栅漏区表面及栅边缘俘获负电荷。The hot electron stress test was applied on GaAs MESFET with stress conditions of 24 V ≤ VDS ≤28 V and -5.5 V ≤ VGS ≤-4 V. The degradation modes observed include saturated drain current, transconductance reduction, pinch-off voltage increase and breakdown voltage walkout. From the view point of microwave performance, hot electron effect induces power slump. The mechanism for the degradation may be the trap of negative charge due to the interface states in the passivation between gate and drain.

关 键 词：砷化镓 金属-半导体场效应晶体管 热电子效应 界面态 退化 

分 类 号：TN386.1[电子电信—物理电子学]