GaN p-i-n紫外探测器的研制  

GaN p-i-n Ultraviolet Detectors

作　　者：陈江峰[1] 李雪[2] 

机构地区：[1]上海交通大学微电子学院,上海200092 [2]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083

出　　处：《半导体光电》2005年第6期491-493,498,共4页Semiconductor Optoelectronics

摘　　要：研制了一种GaN p-i-n型单元器件,详细地讨论了该器件的制备工艺,并对该器件进行了光电性能测试.测试结果表明,器件的正向开启电压在2 V左右,零偏动态电阻R0约为1010～1011 Ω,最大峰值响应率在365 nm处为0.18～0.21 A/W,器件的上升响应时间和下降时间分别为2.8和13.4 ns.Newly developing GaN p-i-n ultraviolet detector was reported, and fabrication processes were discussed in detail. The current-voltage characteristics and spectral responsivity of the diodes were measured to characterize their optoelectronic performances. The results show that turn-on voltage is about 2 V, dynamic resistance at zero-bias is I X 10^10 × 10^11 Ω, the maximum peak responsivities at 365 nrn were 0. 18 - 0. 21 A/W, rise response time and fall response time were 2.8 ns and 13.4 ns, respectively.

关 键 词：紫外探测器 氮化镓 刻蚀 

分 类 号：TN364.2[电子电信—物理电子学]