GaAs MESFET的背栅效应研究  

Research on the Backgating Effect of GaAs MESFETs

作　　者：赵大德 

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》1989年第2期164-171,共8页Research & Progress of SSE

摘　　要：本文着重研究了分立GaAc耗尽型MESFET背栅效应的光敏性和尺寸效应。本文还采用一种实验方法——器件在光照下,观察栅压的调制作用,解释了背栅效应机理。不同栅压下,背栅效应的大小不同,零栅压下的背栅效应比负栅偏压下的背栅效应更小。发现衬底峰值电流与背栅效应有密切关系。This paper investigated the dependence of the baekgating effect of a discrete depletion-mode MESFET on the light sensitivity and the baekgating electrode dimensions. With an experiment on gate voltage modulation characteristic of GaAs MESFETs under illumination, auther demonstrated the mechanism of the baekgating effect reported by Wager. The baekgating effect is also changed with the gate voltage. It is observed that the baekgating effect is weaker at zero gate voltage than at negative gate voltage and the substrate leakage current is closely related to the baekgating effect.

关 键 词：GAAS MESFET 背栅效应 

分 类 号：TN386[电子电信—物理电子学]