一种新的部分耗尽SOI器件BTS结构  

Novel BTS Structure Technology for Partially Depleted SOI MOSFET

作　　者：李瑞贞[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2005年第4期730-732,共3页Chinese Journal of Electron Devices

摘　　要：提出了一种新的部分耗尽SOI体接触技术,与其它体接触技术相比,该方法可以有效抑制SOI器件的浮体效应。形成多晶硅栅之前在源区进行大剂量P+杂质注入,然后形成非对称源区浅结结构。然后生长硅化物电极,厚的硅化物穿透源区浅结与下面高浓度的体区形成欧姆接触。二维器件模拟表明该结构可以有效降低强反型区体区电势,从而抑制了浮体效应。A novel body contact technique for partially depleted SOI MOSFET is proposed. This method can suppress floating body effect of SOI MOSFET more effectively compared with other methods. A heavy P＋ implant in source region is performed before poly-silicon gate deposit. Then the asymmetric structure with shallow source is formed. When growing silicide electrode, the thick silicide can punch through the shallow source and form Ohm contact with body below that has high dopant concentration. Two-dimension device simulation indicates this structure can depress the body potential in strong inversion region. Then the floating body effect is depressed.

关 键 词：SOI 浮体效应 体接触 

分 类 号：TN386[电子电信—物理电子学]