常规退火与光退火固相晶化的对比  

Comparison of the Solid-phase Crystallization between Conventional Furnace Annealing and Pulsed Rapid Thermal Method

作　　者：靳锐敏[1] 卢景霄[1] 王海燕[1] 张丽伟[1] 王生钊[1] 刘萍[1] 王红娟[1] 

机构地区：[1]郑州大学材料物理教育部重点实验室,郑州450052

出　　处：《人工晶体学报》2005年第6期1171-1173,共3页Journal of Synthetic Crystals

摘　　要：为研究传统炉子退火与光退火固相晶化的不同特点,用石英玻璃作衬底,在室温、350℃和450℃下用PECVD法直接沉积非晶硅(a-S i:H)薄膜,把沉积的样品分别在850℃下用传统炉子退火3h、用光快速热处理(RTP)5m in,然后用Ram an、XRD和SEM分析对比,发现传统炉子退火后的晶粒分布不均匀,光退火后的晶粒分布均匀。XRD分析发现两种方法晶粒尺寸均为30nm左右。Undoped amorphous silicon film deposited by PECVD at 30℃, 350℃, 450℃ substrate temperatures, annealed at 850℃ by conventional furnace for 3h and pulsed rapid thermal method for 5rain was studied by using Raman, XRD and SEM. It can be seen that the thin film made by pulsed rapid thermal method has a smooth and perfect structure, and the thin film annealed in the conventional furnace has a high degree of structural disorder. A grain size of 30nm or so was obtained by both ways.

关 键 词：PECVD法 非晶硅薄膜 传统退火炉子 光退火 晶粒大小 拉曼光谱 XRD SEM 

分 类 号：O484[理学—固体物理]