在MOCVD系统中用预淀积In纳米点低温下合成生长InN  

Synthesis and Growth of InN with Pre-deposited Indium Nanodots Method on MOCVD at Low Temperature

作　　者：谢自力[1] 张荣[1] 修向前[1] 毕朝霞[1] 刘斌[1] 濮林[1] 陈敦军[1] 韩平[1] 顾书林[1] 江若琏[1] 朱顺明[1] 赵红[1] 施毅[1] 郑有炓[1] 

机构地区：[1]南京大学物理系江苏省光电功能材料重点实验室,南京210093

出　　处：《人工晶体学报》2005年第6期1050-1055,共6页Journal of Synthetic Crystals

基　　金：国家重点基础研究发展规划(G2000068305);国家高技术研究发展规划(No.2001AA311110;No.2003AA311060;No.2004AA311080);国家自然科学基金(No.69976014;No.69806006;No.69987001;No.6039072;No.60476030);国家杰出青年基金(No.60025411);江苏省自然科学基金重点项目(BK2003203)

摘　　要：利用低压金属有机化学气相淀积(LP-MOCVD)系统,在(0001)蓝宝石衬底上采用预淀积In纳米点技术低温合成制备了立方相的InN薄膜。首先以TM In作源在蓝宝石衬底表面预淀积了一层金属In纳米点,然后在一定条件下合成生长InN薄膜。X射线衍射谱(XRD)和X射线光电子发射谱(XPS)显示适当的预淀积In不仅能够促进InN的生长,同时还能够抑制金属In在InN薄膜中的聚集。原子力显微镜(AFM)观察表明,金属In纳米点不仅增强了成核密度,而且促进了InN岛的兼并。自由能计算表明预淀积的In优先和NH3分解得到的NH与N基反应生成InN。我们认为这种优先生成的InN为接下来InN的生长提供了成核位,从而促进了InN的生长。The cubic InN films were deposited on the sapphire substrates using low-pressure MOCVD at low temperature. The technique of pre-deposition of the In nanodots was applied, then the InN films were synthesized and grown. X-ray diffraction （XRD） and X-ray photoelectron spectra （XPS） show that predeposition of the In nanodots is able to promote the growth of InN, and meanwhile, suppress the In segregation in the grown layer. Atomic force microscope （AFM） images of InN films indicate that predeposition of the In nanodots not only enhances the density of nucleate sites, but also facilitate the coalescence among the InN islands. Careful inspection suggests that the preferential bond of pre-deposited In atoms with N atoms, instead of with In atoms, is responsible for the above phenomena.

关 键 词：INN 预淀积In纳米点 MOCVD 

分 类 号：O484[理学—固体物理]