MOCVD生长In_xGa_(1-x)N薄膜的表征  

Characterization of In_xGa_(1-x)N Layers Grown by MOCVD

作　　者：李亮[1] 张荣[1] 谢自力[1] 张禹[1] 修向前[1] 刘成祥[1] 毕朝霞[1] 陈琳[1] 刘斌[1] 俞慧强[1] 韩平[1] 顾书林[1] 施毅[1] 郑有炓[1] 

机构地区：[1]江苏省光电信息功能材料重点实验室南京大学物理系,南京210093

出　　处：《人工晶体学报》2005年第6期1118-1121,共4页Journal of Synthetic Crystals

基　　金：国家重点基础研究发展规划(G2000068305);国家高技术研究发展规划(2001AA311110;2003AA311060;2004AA311080);国家自然科学基金(No.69976014;No.69806006;No.69987001;No.6039072;No.60476030);国家杰出青年基金(No.60025411);江苏省自然科学基金重点项目(BK2003203)

摘　　要：本文利用MOCVD方法在(0001)取向的蓝宝石衬底上实现了不同生工艺条件下的InxGa1-xN薄膜的制备,并通过XRD、SEM、AFM等测量分析方法系统研究了生长工艺参数对InxGa1-xN薄膜的组分和性质的影响。InxGa1-xN薄膜的制备包括蓝宝石衬底表面上GaN缓冲层的生长以及缓冲层上InxGa1-xN薄膜的沉积两个过程。通过对所制备InxGa1-xN薄膜的XRD、SEM、AFM分析发现,调节生长温度和TMGa的流量可以有效控制InxGa1-xN薄膜中In的组分,并且随着生长温度的升高,InxGa1-xN薄膜的表面缺陷减少。InxGa1-xN films were deposited on （0001）sapphire substrates with GaN buffer layers using various growth paremeters by metalorganic chemical vapor deposition （MOCVD）. XRD, AFM and SEM were employed to analyze the influences of growth parameters on the In content and the properties of Inx Ga1-xN films. Deposition of Inx Ga1-x N films included two processes：first, GaN buffer layers were grown on sapphire substrates;then, InxGa1-xN films were deposited on GaN buffer layers. By means of XRD, AFM and SEM, we find that In content of InxGa1-xN films could be efficiently controlled by growth temperature and flow rate of TMGa, and the defects on the surface of InxGa1-xN films decreased with increase of growth temperature.

关 键 词：MOCVD InxGa1-xN 薄膜 缓冲层 

分 类 号：O484[理学—固体物理]