LP－MOCVD生长InGaN单晶薄膜  

Growth of InGaN single crystal film by LP-MOCVD

作　　者：童玉珍[1] 张国义[1] 徐自亮 党小忠 杨志坚[1] 金泗轩[1] 刘弘度 王舒民[1] 

机构地区：[1]北京大学

出　　处：《半导体光电》1996年第2期147-150,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金

摘　　要：报道了以Ａｌ２Ｏ３为衬底在ＧａＮ薄膜上ＬＰ－ＭＯＣＶＤ外延生长ＩｎＧａＮ单晶薄膜，并研究了ＩｎＧａＮ的生长特性。实验给出了ＩｎｘＧ１－ｘＮ合金的固相组分与汽相组分和生长温度的变化关系，并应用Ｘ射线衍射（ＸＲＤ）、Ｘ射线回摆曲线（ＸＲＣ）和室温光致荧光（ＰＬ）谱等技术对外延层的晶体质量、完整性和发光特性进行了分析。发现ＩｎＧａＮ／ＧａＮ系统中保持适当的压应力有助于提高外延层的晶体完整性，减少非故意掺杂杂质的引入，能改善外延层的发光特性。In this Paper, it is reported that InGaN/GaN/Al2O3 was grown by LP -MOCVD,and its characteristics of growth were studied.The dependence of InxGa1-xN solid phase composition on that of vapor phase and growth temperature was given.Perfection and quality of epilayer and luminous property analyzed by XRD,XRC and PL technologies.It has been found that a suitable compress stress existing in InGaN/GaN system can improve a perfection of InGaN epilayer and reduce the introduction of unintentional dopant impurities,make luminous performance better.

关 键 词：半导体薄膜 金属有机物 化学汽相淀积 外延生长 

分 类 号：TN304.05[电子电信—物理电子学]